AS4C64M16D3B-12BANTR

Product Overview

Category

AS4C64M16D3B-12BANTR belongs to the category of dynamic random-access memory (DRAM) modules.

Use

It is primarily used in computer systems and electronic devices for storing and accessing data quickly.

Characteristics

• High-speed data access
• Large storage capacity
• Volatile memory (data is lost when power is turned off)
• Requires periodic refreshing

Package

AS4C64M16D3B-12BANTR is packaged as a small form factor dual in-line memory module (DIMM).

Essence

The essence of AS4C64M16D3B-12BANTR is its ability to provide fast and efficient data storage and retrieval in electronic devices.

Packaging/Quantity

AS4C64M16D3B-12BANTR is typically sold in individual units or in bulk packaging, depending on the customer's requirements.

Specifications

• Part Number: AS4C64M16D3B-12BANTR
• Memory Type: DDR3 SDRAM
• Capacity: 1 Gigabit (64 Megabytes)
• Organization: 64M words x 16 bits
• Speed: 1200 MHz
• Voltage: 1.5V
• Operating Temperature: -40°C to +85°C
• Interface: 240-pin DIMM

Detailed Pin Configuration

The AS4C64M16D3B-12BANTR module has a total of 240 pins. The pin configuration is as follows:

• Pins 1-8: Address Inputs
• Pins 9-16: Address Inputs
• Pins 17-24: Address Inputs
• Pins 25-32: Address Inputs
• Pins 33-40: Address Inputs
• Pins 41-48: Address Inputs
• Pins 49-56: Address Inputs
• Pins 57-64: Address Inputs
• Pins 65-72: Address Inputs
• Pins 73-80: Address Inputs
• Pins 81-88: Address Inputs
• Pins 89-96: Address Inputs
• Pins 97-104: Address Inputs
• Pins 105-112: Address Inputs
• Pins 113-120: Address Inputs
• Pins 121-128: Address Inputs
• Pins 129-136: Address Inputs
• Pins 137-144: Address Inputs
• Pins 145-152: Address Inputs
• Pins 153-160: Address Inputs
• Pins 161-168: Address Inputs
• Pins 169-176: Address Inputs
• Pins 177-184: Address Inputs
• Pins 185-192: Address Inputs
• Pins 193-200: Address Inputs
• Pins 201-208: Address Inputs
• Pins 209-216: Address Inputs
• Pins 217-224: Address Inputs
• Pins 225-232: Address Inputs
• Pins 233-240: Address Inputs

Functional Features

• High-speed data transfer rate
• Low power consumption
• Auto-refresh capability
• On-die termination (ODT) for improved signal integrity
• Burst mode operation for efficient data access

Advantages and Disadvantages

Advantages

• Fast data access speed
• Large storage capacity
• Compatible with various computer systems and electronic devices
• Cost-effective compared to other memory technologies

Disadvantages

• Volatile memory (data is lost when power is turned off)
• Requires periodic refreshing
• Relatively higher power consumption compared to non-volatile memory

Working Principles

AS4C64M16D3B-12BANTR operates based on the principles of dynamic random-access memory. It stores data in capacitors within each memory cell, which are organized in a matrix. To read or write data, the module sends electrical signals to the appropriate row and column addresses.

Detailed Application Field Plans

AS4C64M16D3B-12BANTR is widely used in various applications, including: - Personal computers - Laptops - Servers - Workstations - Networking equipment - Embedded systems - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models to AS4C64M16D3B-12BANTR include: - AS4C64M16D3B-12BIN - AS4C64M16D3B-12BCN - AS4C64M16D3B-12BCNTR - AS4C64M16D3B-12BCNTRT

These models offer similar specifications and functionality, providing flexibility for different system requirements.

In conclusion, AS4C64M16D3B