Ampleon USA Inc.
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BLF888BS,112
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BLF888BS,112

Product Overview

Category

The BLF888BS,112 belongs to the category of RF power transistors.

Use

It is used in high-power amplifiers for various applications such as radio frequency (RF) communication systems and radar systems.

Characteristics

  • High power handling capability
  • Broadband operation
  • High efficiency
  • Excellent linearity

Package

The BLF888BS,112 comes in a ceramic package, which provides excellent thermal performance and reliability.

Essence

This product is essential for achieving high power amplification in RF communication and radar systems.

Packaging/Quantity

The BLF888BS,112 is typically packaged individually and is available in various quantities depending on the supplier.

Specifications

  • Frequency Range: 470 - 860 MHz
  • Output Power: 125 W
  • Gain: 17 dB
  • Efficiency: 30%
  • Operating Voltage: 32 V
  • Operating Temperature: -40°C to +150°C

Detailed Pin Configuration

The BLF888BS,112 has a detailed pin configuration with specific connections for gate, drain, and source terminals. Refer to the datasheet for the exact pinout details.

Functional Features

  • High power gain
  • Wide frequency coverage
  • High efficiency at high power levels
  • Good linearity for signal fidelity

Advantages

  • Suitable for broadband applications
  • High power handling capability
  • Reliable ceramic packaging for thermal management

Disadvantages

  • Higher cost compared to lower power transistors
  • Requires careful matching and biasing for optimal performance

Working Principles

The BLF888BS,112 operates based on the principles of RF power amplification using field-effect transistor (FET) technology. It amplifies input RF signals to deliver high-power output with minimal distortion.

Detailed Application Field Plans

The BLF888BS,112 is widely used in: - Base stations for cellular communication - Broadcast transmitters - Radar systems - Industrial RF heating applications

Detailed and Complete Alternative Models

  • MRF151G
  • MRFE6VP61K25H
  • BLF578XR

Note: The alternative models listed above are similar RF power transistors that can be used as substitutes for the BLF888BS,112 in various applications.

In conclusion, the BLF888BS,112 is a high-performance RF power transistor suitable for demanding applications requiring high power amplification across a broad frequency range. Its characteristics, specifications, and functional features make it an essential component in modern RF communication and radar systems.

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แสดงรายการคำถามและคำตอบทั่วไป 10 ข้อที่เกี่ยวข้องกับการใช้ BLF888BS,112 ในโซลูชันทางเทคนิค

  1. What is the maximum power output of BLF888BS,112?

    • The maximum power output of BLF888BS,112 is typically 1500 watts.

  2. What is the operating frequency range of BLF888BS,112?

    • BLF888BS,112 operates in the frequency range of 470-860 MHz.

  3. What is the typical gain of BLF888BS,112?

    • The typical gain of BLF888BS,112 is around 18-20 dB.

  4. What are the recommended supply voltage and current for BLF888BS,112?

    • The recommended supply voltage for BLF888BS,112 is 32 V, with a typical current of 15 A.

  5. What is the thermal resistance of BLF888BS,112?

    • The thermal resistance of BLF888BS,112 is typically 0.35°C/W.

  6. What are the typical input and output impedance values for BLF888BS,112?

    • The typical input and output impedance values for BLF888BS,112 are 50 ohms.

  7. What are the key applications for BLF888BS,112?

    • BLF888BS,112 is commonly used in high-power broadcast transmitters, digital TV transmitters, and other RF amplification applications.

  8. What are the recommended thermal management guidelines for BLF888BS,112?

    • It is recommended to use proper heat sinking and cooling solutions to maintain the junction temperature within the specified limits.

  9. What are the protection features available in BLF888BS,112?

    • BLF888BS,112 includes protection against overcurrent, overvoltage, and overtemperature conditions.

  10. Are there any specific layout considerations for using BLF888BS,112 in a design?

    • Proper RF layout techniques, grounding, and decoupling practices should be followed to ensure optimal performance and stability when using BLF888BS,112 in a design.