NE856M03-A belongs to the category of RF transistors and is commonly used in high-frequency applications. This transistor exhibits characteristics such as high gain, low noise, and excellent linearity. It is typically packaged in a small outline transistor (SOT-143) package and is available in various quantities.
The NE856M03-A transistor has the following specifications: - Frequency Range: 0.1 GHz to 2.5 GHz - Gain: 15 dB - Noise Figure: 1.2 dB - Power Dissipation: 250 mW - Voltage Rating: 12 V
The NE856M03-A transistor has a standard pin configuration with three pins: collector, base, and emitter.
| Pin | Description | |-----|-------------| | 1 | Collector | | 2 | Base | | 3 | Emitter |
The NE856M03-A operates based on the principles of bipolar junction transistors (BJTs), utilizing its three terminals to amplify high-frequency signals with low noise and high linearity.
The NE856M03-A transistor is well-suited for the following applications: - Radio frequency amplifiers - Wireless communication systems - Radar systems - Test and measurement equipment
Some alternative models to NE856M03-A include: - NE856M04-A - NE856M05-A - NE856M06-A
In summary, the NE856M03-A RF transistor offers high gain, low noise, and excellent linearity, making it suitable for various high-frequency applications. Its compact SOT-143 package and wide frequency range further enhance its versatility in different electronic designs.
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What is NE856M03-A?
What are the key features of NE856M03-A?
In what technical solutions can NE856M03-A be used?
What is the typical operating frequency range of NE856M03-A?
What are the recommended biasing conditions for NE856M03-A?
How does NE856M03-A compare to similar transistors in terms of performance?
Are there any application notes or reference designs available for using NE856M03-A in technical solutions?
What are the thermal considerations for NE856M03-A in high-power applications?
Can NE856M03-A be used in battery-powered or low-power applications?
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