S29GL032N90DFI023

Product Overview

Category

S29GL032N90DFI023 belongs to the category of flash memory devices.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High storage capacity: Offers 32 gigabytes (GB) of storage space.
• Fast read and write speeds: Enables quick access to stored data.
• Reliable performance: Ensures data integrity and durability.
• Low power consumption: Optimizes battery life in portable devices.

Package

S29GL032N90DFI023 is available in a compact and standardized package that facilitates easy integration into electronic circuits.

Essence

The essence of S29GL032N90DFI023 lies in its ability to provide high-capacity, non-volatile storage with fast access times, making it an essential component for modern electronic devices.

Packaging/Quantity

This product is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package may vary, but commonly ranges from several hundred to several thousand units.

Specifications

• Memory Type: Flash
• Capacity: 32 GB
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Package/Case: 48-TFBGA
• Data Retention: Up to 20 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The pin configuration of S29GL032N90DFI023 is as follows:

1. VCC (Power Supply)
2. A0-A18 (Address Inputs)
3. DQ0-DQ15 (Data Inputs/Outputs)
4. WE# (Write Enable)
5. CE# (Chip Enable)
6. OE# (Output Enable)
7. RY/BY# (Ready/Busy)
8. RESET# (Reset)

Functional Features

• High-speed data transfer: S29GL032N90DFI023 supports fast read and write operations, allowing for efficient data handling.
• Error correction: Built-in error correction mechanisms ensure data integrity during storage and retrieval.
• Block erase capability: The device can erase data in large blocks, enhancing efficiency when updating or deleting stored information.
• Sector protection: Certain sectors can be protected from accidental modification, providing enhanced security.

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast read and write speeds
• Low power consumption
• Reliable performance
• Long data retention period

Disadvantages

• Relatively higher cost compared to other memory options
• Limited endurance compared to some alternative models

Working Principles

S29GL032N90DFI023 utilizes a floating gate transistor technology to store data. When data is written, charges are trapped in the floating gate, altering the transistor's behavior. These charges can be removed during an erase operation, allowing the transistor to return to its original state. The presence or absence of charges determines the stored data value.

Detailed Application Field Plans

S29GL032N90DFI023 finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Embedded systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to S29GL032N90DFI023 include: - S34ML04G2 - MT29F32G08CBACAWP - IS37SML01G1

These models provide comparable storage capacity, performance, and features, making them suitable alternatives for different application requirements.

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