DD500S65K3NOSA1

Product Overview

• Category: Semiconductor
• Use: Power electronics
• Characteristics: High power handling, low on-state voltage, fast switching speed
• Package: TO-247
• Essence: Silicon carbide (SiC) Schottky diode
• Packaging/Quantity: Single unit

Specifications

• Voltage Rating: 650V
• Current Rating: 50A
• Forward Voltage Drop: 1.8V at 25°C
• Reverse Recovery Time: <20ns
• Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

• Pin 1: Anode
• Pin 2: Cathode
• Pin 3: Not connected (NC)

Functional Features

• Fast switching speed for high-frequency applications
• Low on-state voltage drop for reduced power losses
• High temperature operation capability for rugged environments

Advantages and Disadvantages

Advantages

• Enhanced efficiency in power conversion systems
• Improved thermal management due to lower losses
• Suitable for high-frequency operation

Disadvantages

• Higher initial cost compared to traditional silicon diodes
• Sensitivity to overvoltage conditions

Working Principles

The DD500S65K3NOSA1 is a silicon carbide Schottky diode that operates based on the rectifying properties of the semiconductor junction. When forward-biased, it allows current flow with minimal voltage drop, leading to reduced power dissipation.

Detailed Application Field Plans

The DD500S65K3NOSA1 is ideal for use in: - Switch-mode power supplies - Solar inverters - Electric vehicle charging systems - Induction heating equipment - Motor drives

Detailed and Complete Alternative Models

• STPSC6H065DI: 650V, 6A SiC Schottky diode
• C3D05060A: 600V, 5A SiC Schottky diode
• FFSP3065B: 650V, 30A SiC Schottky diode

This completes the entry for DD500S65K3NOSA1, providing comprehensive information about its category, specifications, features, and application areas.

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