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IPB45N04S4L08ATMA1
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IPB45N04S4L08ATMA1

Product Overview

Category

The IPB45N04S4L08ATMA1 belongs to the category of power MOSFETs.

Use

It is used as a high-performance switching device in various electronic circuits and power applications.

Characteristics

  • High voltage capability
  • Low on-resistance
  • Fast switching speed
  • Low gate charge

Package

The IPB45N04S4L08ATMA1 is typically available in a TO-263 package.

Essence

This MOSFET is essential for efficient power management and control in electronic systems.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

  • Drain-Source Voltage (VDS): 40V
  • Continuous Drain Current (ID): 45A
  • RDS(ON) (Max) @ VGS = 10V: 4.8mΩ
  • Gate-Source Voltage (VGS): ±20V
  • Total Gate Charge (Qg): 38nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

The IPB45N04S4L08ATMA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low on-resistance for minimal power dissipation
  • High-speed switching for efficient operation
  • Robust construction for reliability in demanding applications

Advantages

  • High voltage capability allows for versatile use
  • Low on-resistance minimizes power losses
  • Fast switching speed enables efficient operation

Disadvantages

  • Higher gate charge compared to some alternative models
  • Limited availability from certain suppliers

Working Principles

The IPB45N04S4L08ATMA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The IPB45N04S4L08ATMA1 is suitable for a wide range of applications, including: - Switching power supplies - Motor control - DC-DC converters - Battery management systems - Inverters

Detailed and Complete Alternative Models

Some alternative models to the IPB45N04S4L08ATMA1 include: - IRF4905 - FDP8870 - AUIRFN8409

In conclusion, the IPB45N04S4L08ATMA1 is a high-performance power MOSFET with characteristics that make it suitable for various electronic applications, despite some limitations in availability and gate charge compared to alternative models.

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  1. What is the maximum drain-source voltage of IPB45N04S4L08ATMA1?

    • The maximum drain-source voltage of IPB45N04S4L08ATMA1 is 40V.

  2. What is the continuous drain current rating of IPB45N04S4L08ATMA1?

    • The continuous drain current rating of IPB45N04S4L08ATMA1 is 45A.

  3. What is the on-resistance of IPB45N04S4L08ATMA1?

    • The on-resistance of IPB45N04S4L08ATMA1 is typically 4mΩ at Vgs=10V.

  4. Can IPB45N04S4L08ATMA1 be used in automotive applications?

    • Yes, IPB45N04S4L08ATMA1 is designed for use in automotive applications.

  5. What is the operating temperature range of IPB45N04S4L08ATMA1?

    • The operating temperature range of IPB45N04S4L08ATMA1 is -55°C to 175°C.

  6. Does IPB45N04S4L08ATMA1 have built-in ESD protection?

    • Yes, IPB45N04S4L08ATMA1 features built-in ESD protection.

  7. What type of package does IPB45N04S4L08ATMA1 come in?

    • IPB45N04S4L08ATMA1 comes in a TO-263-7 package.

  8. Is IPB45N04S4L08ATMA1 suitable for high-frequency switching applications?

    • Yes, IPB45N04S4L08ATMA1 is suitable for high-frequency switching applications.

  9. What gate threshold voltage does IPB45N04S4L08ATMA1 require?

    • IPB45N04S4L08ATMA1 typically requires a gate threshold voltage of 2.5V.

  10. Can IPB45N04S4L08ATMA1 be used in power management solutions?

    • Yes, IPB45N04S4L08ATMA1 is commonly used in power management solutions.