IS42S16100E-7B-TR

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory module
• Characteristics: High-speed, low-power consumption
• Package: 54-ball FBGA (Fine-Pitch Ball Grid Array)
• Essence: Dynamic Random Access Memory (DRAM)
• Packaging/Quantity: Tape and Reel, 2500 pieces per reel

Specifications

• Organization: 16M words x 1 bit
• Voltage Supply: 2.5V ± 0.2V
• Operating Temperature Range: -40°C to +85°C
• Clock Frequency: 166 MHz
• Access Time: 6 ns
• Refresh Mode: Auto-refresh and self-refresh
• Burst Length: 1, 2, 4, 8, Full Page
• Power Consumption: Active - 400 mW (typical), Standby - 10 µW (typical)

Detailed Pin Configuration

The IS42S16100E-7B-TR has a total of 54 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. WE#
12. CAS#
13. RAS#
14. CS#
15. BA0
16. A0
17. A1
18. A2
19. A3
20. A4
21. A5
22. A6
23. A7
24. A8
25. A9
26. A10
27. A11
28. A12
29. A13
30. A14
31. A15
32. A16
33. A17
34. A18
35. A19
36. A20
37. A21
38. A22
39. A23
40. A24
41. A25
42. A26
43. A27
44. VDDQ
45. DQM0
46. DQM1
47. VSSQ
48. CLK
49. CKE
50. CS#
51. RAS#
52. CAS#
53. WE#
54. VSS

Functional Features

• High-speed data transfer with a clock frequency of 166 MHz
• Low-power consumption for energy-efficient operation
• Auto-refresh and self-refresh modes for efficient memory management
• Burst length options for flexible data access
• Wide operating temperature range for versatile applications

Advantages and Disadvantages

Advantages: - High-speed performance enables quick data access - Low-power consumption prolongs battery life in portable devices - Auto-refresh and self-refresh modes ensure data integrity - Wide operating temperature range allows usage in various environments

Disadvantages: - Limited storage capacity compared to other memory technologies - Relatively higher cost per unit compared to some alternative models

Working Principles

The IS42S16100E-7B-TR is a dynamic random access memory (DRAM) module. It stores data in capacitors within its memory cells, which need to be periodically refreshed to maintain the stored information. The memory cells are organized in a 16M x 1 bit configuration, allowing for high-density data storage. The module operates at a clock frequency of 166 MHz, enabling fast data transfer between the memory and the connected device.

Detailed Application Field Plans

The IS42S16100E-7B-TR memory module finds application in various fields, including: 1. Personal Computers (PCs) and laptops 2. Servers and data centers 3. Networking equipment 4. Telecommunications devices 5. Consumer electronics (e.g., smartphones, tablets) 6. Automotive electronics 7. Industrial automation systems

Detailed and Complete Alternative Models

Some alternative models to the IS42S16100E-7B-TR memory module include: 1. MT48LC16M16A2P-75: 16M x 16-bit SDRAM module by Micron Technology Inc. 2. K4S561632H-UC60: 16M x 16-bit SDRAM module by Samsung Electronics Co., Ltd. 3. HYB39S256160FE-7: 16M x 16-bit SDRAM module by Infineon Technologies AG 4. AS4C16M16SA-6TIN: 16M x 16-bit SDRAM module by Alliance Memory Inc.

These alternative models offer similar functionality and can be used as substitutes for the IS42S16100E-7B-TR in various applications.

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