IS61LPS25636A-200B3I-TR

Product Overview

Category

IS61LPS25636A-200B3I-TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed performance
• Low power consumption
• Compact size
• Reliable data retention
• Wide operating temperature range

Package

IS61LPS25636A-200B3I-TR is available in a small form factor package, suitable for surface mount technology (SMT) assembly.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

IS61LPS25636A-200B3I-TR is typically packaged in reels or trays, with a quantity of 2500 units per reel/tray.

Specifications

• Part Number: IS61LPS25636A-200B3I-TR
• Memory Type: Static Random Access Memory (SRAM)
• Organization: 256K words x 36 bits
• Operating Voltage: 2.5V - 3.3V
• Access Time: 200 ns
• Operating Temperature Range: -40°C to +85°C
• Package Type: BGA (Ball Grid Array)

Detailed Pin Configuration

The pin configuration of IS61LPS25636A-200B3I-TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. DQ16
19. DQ17
20. DQ18
21. DQ19
22. DQ20
23. DQ21
24. DQ22
25. DQ23
26. DQ24
27. DQ25
28. DQ26
29. DQ27
30. DQ28
31. DQ29
32. DQ30
33. DQ31
34. /WE
35. /OE
36. /CE1
37. /CE2
38. /BYTE
39. A0
40. A1
41. A2
42. A3
43. A4
44. A5
45. A6
46. A7
47. A8
48. A9
49. A10
50. A11
51. A12
52. A13
53. A14
54. A15
55. A16
56. A17
57. A18
58. A19
59. A20
60. A21
61. A22
62. A23
63. A24
64. A25
65. VSS

Functional Features

• High-speed random access
• Non-volatile data storage
• Low power standby mode
• Easy integration with various electronic systems
• Error detection and correction capabilities

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Low power consumption
• Compact size for space-constrained applications
• Reliable data retention even in harsh environments
• Wide operating temperature range for versatile usage

Disadvantages

• Limited storage capacity compared to other memory technologies
• Relatively higher cost per bit compared to mass storage solutions

Working Principles

IS61LPS25636A-200B3I-TR utilizes static random access memory (SRAM) technology. It stores data in a volatile manner, meaning that the data is lost when power is removed. The memory cells are organized in a matrix of rows and columns, allowing for fast random access to any location within the memory array.

Detailed Application Field Plans

IS61LPS25636A-200B3I-TR finds applications in various electronic devices and systems, including but not limited to: - Computers and servers - Networking equipment - Telecommunications devices - Automotive electronics - Industrial control systems - Medical devices - Consumer electronics

Detailed and Complete Alternative Models

Some alternative models to IS61LPS25636A-200B3I-TR include: - IS61LPD25636A-200B3I-TR - IS61LPS51218A-200B3I-TR - IS61LPS