IS62WV12816BLL-55BI
Product Overview
Category
IS62WV12816BLL-55BI belongs to the category of semiconductor memory products.
Use
This product is primarily used for data storage and retrieval in electronic devices.
Characteristics
- High-speed operation
- Low power consumption
- Large storage capacity
- Reliable performance
Package
IS62WV12816BLL-55BI is available in a compact package that ensures easy integration into various electronic devices.
Essence
The essence of IS62WV12816BLL-55BI lies in its ability to provide efficient and reliable data storage solutions for electronic devices.
Packaging/Quantity
IS62WV12816BLL-55BI is typically packaged in quantities suitable for industrial production and distribution.
Specifications
- Model: IS62WV12816BLL-55BI
- Memory Type: Static Random Access Memory (SRAM)
- Capacity: 128 megabits (16 megabytes)
- Operating Voltage: 3.3V
- Speed Grade: 55ns
- Interface: Parallel
- Pin Count: 48 pins
- Package Type: Ball Grid Array (BGA)
Detailed Pin Configuration
- VCC
- A0
- A1
- A2
- A3
- A4
- A5
- A6
- A7
- A8
- A9
- A10
- A11
- A12
- A13
- A14
- A15
- CE#
- OE#
- WE#
- BYTE#
- UB/LB#
- DQ0
- DQ1
- DQ2
- DQ3
- DQ4
- DQ5
- DQ6
- DQ7
- DQ8
- DQ9
- DQ10
- DQ11
- DQ12
- DQ13
- DQ14
- DQ15
- NC
- VSS
- VSS
- VSS
- VSS
- VSS
- VSS
- VSS
- VSS
- VCC
Functional Features
- High-speed data access
- Non-volatile storage
- Low power consumption
- Easy integration into electronic devices
- Reliable performance in various operating conditions
Advantages and Disadvantages
Advantages
- High-speed operation allows for efficient data processing.
- Large storage capacity meets the demands of modern electronic devices.
- Low power consumption prolongs battery life.
- Reliable performance ensures data integrity.
Disadvantages
- Limited compatibility with certain older device architectures.
- Higher cost compared to other memory technologies.
Working Principles
IS62WV12816BLL-55BI operates based on the principles of static random access memory (SRAM). It stores data using a network of flip-flops, which retain their state as long as power is supplied. This allows for fast read and write operations, making it suitable for applications requiring high-speed data access.
Detailed Application Field Plans
IS62WV12816BLL-55BI finds application in various electronic devices, including but not limited to: - Personal computers - Mobile devices - Networking equipment - Automotive electronics - Industrial control systems
Alternative Models
- IS62WV25616BLL-55BI: 256 megabit (32 megabyte) capacity variant of the same product line.
- IS62WV51216BLL-55BI: 512 megabit (64 megabyte) capacity variant of the same product line.
- IS62WV102416BLL-55BI: 1 gigabit (128 megabyte) capacity variant of the same product line.
These alternative models offer increased storage capacity while maintaining similar characteristics and functionality to IS62WV12816BLL-55BI.
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แสดงรายการคำถามและคำตอบทั่วไป 10 ข้อที่เกี่ยวข้องกับการใช้ IS62WV12816BLL-55BI ในโซลูชันทางเทคนิค
Sure! Here are 10 common questions and answers related to the application of IS62WV12816BLL-55BI in technical solutions:
Q: What is IS62WV12816BLL-55BI? A: IS62WV12816BLL-55BI is a specific type of synchronous SRAM (Static Random Access Memory) chip commonly used in various technical solutions.
Q: What is the capacity of IS62WV12816BLL-55BI? A: The IS62WV12816BLL-55BI has a capacity of 128 megabits, which is equivalent to 16 megabytes.
Q: What does the "55BI" in IS62WV12816BLL-55BI represent? A: The "55BI" represents the speed grade and temperature range of the chip. In this case, it indicates a speed grade of 55ns and an industrial temperature range.
Q: What are some typical applications of IS62WV12816BLL-55BI? A: IS62WV12816BLL-55BI is commonly used in networking equipment, telecommunications systems, industrial automation, medical devices, and other embedded systems that require high-speed and reliable memory.
Q: What is the operating voltage of IS62WV12816BLL-55BI? A: The operating voltage of IS62WV12816BLL-55BI is typically 3.3 volts.
Q: Does IS62WV12816BLL-55BI support multiple read and write operations simultaneously? A: Yes, IS62WV12816BLL-55BI supports simultaneous read and write operations, making it suitable for applications that require high-performance memory access.
Q: Can IS62WV12816BLL-55BI be used in battery-powered devices? A: Yes, IS62WV12816BLL-55BI can be used in battery-powered devices as it operates at a low voltage and has low power consumption.
Q: Does IS62WV12816BLL-55BI have any built-in error correction capabilities? A: No, IS62WV12816BLL-55BI does not have built-in error correction capabilities. External error correction techniques may need to be implemented if required.
Q: What is the package type of IS62WV12816BLL-55BI? A: IS62WV12816BLL-55BI is typically available in a 48-pin TSOP (Thin Small Outline Package) or a 48-ball BGA (Ball Grid Array) package.
Q: Are there any specific timing requirements for interfacing with IS62WV12816BLL-55BI? A: Yes, IS62WV12816BLL-55BI has specific timing requirements for various operations such as read, write, and refresh cycles. These timings should be carefully followed as specified in the datasheet to ensure proper functionality.
Please note that the answers provided here are general and may vary depending on the specific implementation and requirements of the technical solution. It is always recommended to refer to the datasheet and consult with the manufacturer for accurate and detailed information.