IS62WV5128BLL-55T2I-TR

Product Overview

Category

IS62WV5128BLL-55T2I-TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• High-speed operation
• Low power consumption
• Non-volatile memory
• Large storage capacity
• Reliable performance

Package

IS62WV5128BLL-55T2I-TR is available in a compact package that ensures easy integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and reliably.

Packaging/Quantity

IS62WV5128BLL-55T2I-TR is typically packaged in trays or reels, with a quantity of 2500 units per reel.

Specifications

• Memory Type: Static Random Access Memory (SRAM)
• Density: 512 kilobits (64 kilobytes)
• Organization: 32,768 words x 16 bits
• Operating Voltage: 3.3V
• Access Time: 55 nanoseconds
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The IS62WV5128BLL-55T2I-TR has the following pin configuration:

1. Vcc
2. A0-A14
3. DQ0-DQ15
4. /WE
5. /OE
6. /CE1
7. /CE2
8. /UB/LB
9. /BYTE
10. /ZZ
11. NC
12. GND

Functional Features

• Fast random access time allows for quick data retrieval.
• Low power consumption ensures energy efficiency.
• Non-volatile memory retains data even when power is disconnected.
• High reliability and durability for long-term use.
• Easy integration into various electronic devices.

Advantages

• High-speed operation enables efficient data processing.
• Low power consumption prolongs battery life in portable devices.
• Non-volatile memory eliminates the need for constant data backup.
• Large storage capacity accommodates extensive data requirements.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Higher cost compared to other types of memory.
• Limited rewrite cycles compared to other non-volatile memories.
• Requires a separate power source to retain data during power loss.

Working Principles

IS62WV5128BLL-55T2I-TR utilizes static random access memory technology, which stores each bit of data in a flip-flop circuit. This allows for fast and direct access to any memory location without the need for refreshing. The stored data remains intact as long as power is supplied to the device.

Detailed Application Field Plans

IS62WV5128BLL-55T2I-TR finds applications in various fields, including:

1. Computer systems
2. Networking equipment
3. Industrial automation
4. Automotive electronics
5. Medical devices
6. Consumer electronics

Detailed and Complete Alternative Models

1. IS62WV25616BLL-55TLI: 256 kilobits (32 kilobytes) density, 55 nanoseconds access time.
2. IS62WV12816BLL-55TLI: 128 kilobits (16 kilobytes) density, 55 nanoseconds access time.
3. IS62WV102416BLL-55TLI: 1 megabit (128 kilobytes) density, 55 nanoseconds access time.
4. IS62WV51216BLL-55TLI: 512 kilobits (64 kilobytes) density, 55 nanoseconds access time.

These alternative models offer similar functionality and characteristics to IS62WV5128BLL-55T2I-TR, but with varying storage capacities.

In conclusion, IS62WV5128BLL-55T2I-TR is a high-speed, low-power semiconductor memory product that provides reliable data storage and retrieval. Its compact package and versatile applications make it suitable for various electronic devices across different industries. While it offers advantages such as fast operation and non-volatile memory, it also has limitations like higher cost and limited rewrite cycles. Nonetheless, its working principles and detailed application field plans demonstrate its significance in the digital world.