IS66WVE2M16EBLL-55BLI-TR

Product Overview

Category

IS66WVE2M16EBLL-55BLI-TR belongs to the category of memory products.

Use

This product is primarily used for storing and retrieving digital information in electronic devices.

Characteristics

• High storage capacity
• Fast data access speed
• Low power consumption
• Compact size
• Reliable performance

Package

IS66WVE2M16EBLL-55BLI-TR is available in a small form factor package, suitable for integration into various electronic devices.

Essence

The essence of IS66WVE2M16EBLL-55BLI-TR lies in its ability to provide efficient and reliable data storage capabilities for electronic systems.

Packaging/Quantity

This product is typically packaged in reels or trays, with a specific quantity per package depending on the manufacturer's specifications.

Specifications

• Model: IS66WVE2M16EBLL-55BLI-TR
• Memory Type: SDRAM (Synchronous Dynamic Random Access Memory)
• Capacity: 2 Megabytes (16 Megabits)
• Operating Voltage: 3.3V
• Speed Grade: -55°C to +85°C
• Interface: Parallel
• Pin Count: 48
• Package Type: BGA (Ball Grid Array)

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. /CAS
31. /RAS
32. /WE
33. /CS
34. /CK
35. /CKE
36. /LDQM
37. /UDQM
38. VSS
39. VSS
40. VSS
41. VSS
42. VSS
43. VSS
44. VSS
45. VSS
46. VSS
47. VSS
48. VDD

Functional Features

• Random access to stored data
• High-speed data transfer
• Low latency
• Burst mode operation
• Auto-refresh capability
• Self-timed precharge

Advantages and Disadvantages

Advantages

• High storage capacity allows for the handling of large amounts of data.
• Fast data access speed ensures quick retrieval and processing of information.
• Low power consumption contributes to energy efficiency in electronic devices.
• Compact size enables integration into space-constrained systems.
• Reliable performance ensures data integrity and system stability.

Disadvantages

• Limited storage capacity compared to other memory technologies.
• Higher cost per unit compared to some alternative memory solutions.
• Requires proper handling and protection against electrostatic discharge (ESD).

Working Principles

IS66WVE2M16EBLL-55BLI-TR operates based on the principles of SDRAM technology. It stores digital information in a matrix of capacitors, with each capacitor representing a single bit of data. The stored information is accessed by applying appropriate voltage levels to the address lines and control signals, allowing for the retrieval and modification of data.

Detailed Application Field Plans

IS66WVE2M16EBLL-55BLI-TR finds applications in various electronic systems, including but not limited to: - Computer systems - Networking equipment - Telecommunications devices - Consumer electronics - Industrial control systems

Detailed and Complete Alternative Models

1. IS66WVE2M16EBLL-55BLI
2. IS66WVE2M16EBLL-55BLITR
3. IS66WVE2M16EBLL-55BLI-TR-E
4. IS66WVE2M16EBLL-55BLI-TR-F
5. IS66WVE2M16EBLL-55BLI-TR-G

These alternative models offer similar functionality and specifications, providing options for different requirements and preferences.

In conclusion, IS66WVE2M16EBLL-55BLI-TR is a memory product that offers high storage capacity, fast data access speed, and low power consumption. It is commonly used in various electronic systems and finds applications in diverse