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IXGH30N120IH

IXGH30N120IH

Introduction

The IXGH30N120IH is a high-power insulated gate bipolar transistor (IGBT) belonging to the semiconductor category. This device is widely used in various applications due to its unique characteristics and functional features.

Basic Information Overview

  • Category: Semiconductor
  • Use: Power switching applications
  • Characteristics: High power handling capability, low saturation voltage, fast switching speed
  • Package: TO-247
  • Essence: Efficient power control and management
  • Packaging/Quantity: Typically packaged individually

Specifications

  • Voltage Rating: 1200V
  • Current Rating: 60A
  • Maximum Power Dissipation: 300W
  • Operating Temperature Range: -55°C to 150°C
  • Gate-Emitter Voltage: ±20V

Detailed Pin Configuration

The IXGH30N120IH features a standard TO-247 pin configuration with three pins: collector, emitter, and gate.

Functional Features

  • High Power Handling: Capable of handling high currents and voltages
  • Low Saturation Voltage: Reduces power losses during operation
  • Fast Switching Speed: Enables efficient power control

Advantages and Disadvantages

Advantages

  • High power handling capability
  • Low saturation voltage
  • Fast switching speed

Disadvantages

  • Higher cost compared to traditional power transistors
  • Sensitive to overvoltage conditions

Working Principles

The IXGH30N120IH operates based on the principles of IGBT technology, which combines the advantages of MOSFETs and bipolar junction transistors. When a suitable gate signal is applied, it allows current to flow between the collector and emitter terminals, enabling efficient power switching.

Detailed Application Field Plans

The IXGH30N120IH finds extensive use in various power electronics applications, including: - Motor drives - Uninterruptible power supplies (UPS) - Renewable energy systems - Induction heating - Welding equipment

Detailed and Complete Alternative Models

  • IXGH30N60C3D1: Lower voltage rating variant
  • IXGH40N60C2D1: Higher voltage and current rating variant
  • IXGH25N120B: Lower current rating variant

In conclusion, the IXGH30N120IH is a versatile semiconductor device with high power handling capabilities, making it suitable for a wide range of power switching applications.

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แสดงรายการคำถามและคำตอบทั่วไป 10 ข้อที่เกี่ยวข้องกับการใช้ IXGH30N120IH ในโซลูชันทางเทคนิค

  1. What is the maximum voltage rating of IXGH30N120IH?

    • The maximum voltage rating of IXGH30N120IH is 1200V.
  2. What is the maximum continuous collector current of IXGH30N120IH?

    • The maximum continuous collector current of IXGH30N120IH is 75A.
  3. What type of package does IXGH30N120IH come in?

    • IXGH30N120IH comes in a TO-247 package.
  4. What are the typical applications for IXGH30N120IH?

    • Typical applications for IXGH30N120IH include motor control, power supplies, and inverters.
  5. What is the on-state voltage of IXGH30N120IH at the rated current?

    • The on-state voltage of IXGH30N120IH at the rated current is typically around 2.2V.
  6. What is the maximum junction temperature of IXGH30N120IH?

    • The maximum junction temperature of IXGH30N120IH is 175°C.
  7. Does IXGH30N120IH have built-in protection features?

    • No, IXGH30N120IH does not have built-in protection features and may require external circuitry for protection.
  8. What is the typical switching frequency range for IXGH30N120IH in power supply applications?

    • The typical switching frequency range for IXGH30N120IH in power supply applications is 20kHz to 100kHz.
  9. Can IXGH30N120IH be used in parallel to increase current handling capability?

    • Yes, IXGH30N120IH can be used in parallel to increase current handling capability in high-power applications.
  10. What are the recommended gate drive requirements for IXGH30N120IH?

    • The recommended gate drive requirements for IXGH30N120IH include a gate voltage of 15V to 20V and sufficient gate current for fast switching.