MT29F128G08AUABAC5-IT:B

Product Overview

Category

MT29F128G08AUABAC5-IT:B belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F128G08AUABAC5-IT:B offers a storage capacity of 128 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations.
• Reliable performance: The product ensures data integrity and reliability through advanced error correction techniques.
• Low power consumption: The MT29F128G08AUABAC5-IT:B is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor, allowing for easy integration into various electronic devices.

Package and Quantity

The MT29F128G08AUABAC5-IT:B is typically packaged in a surface-mount technology (SMT) package. The exact package dimensions and pin configuration are detailed below. The product is usually sold in quantities of multiples of one unit.

Specifications

• Storage Capacity: 128 GB
• Interface: NAND Flash
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)
• Endurance: Up to 100,000 program/erase cycles
• Package Type: SMT package

Pin Configuration

The detailed pin configuration of the MT29F128G08AUABAC5-IT:B is as follows:

1. VCC
2. GND
3. CE#
4. RE#
5. WE#
6. A0-A18
7. CLE
8. ALE
9. WP#
10. R/B#
11. DQ0-DQ15

Functional Features

• Page Program: Allows data to be written in page-sized increments.
• Block Erase: Enables erasing of data in block-sized units.
• Random Access: Provides quick access to specific memory locations.
• Error Correction Code (ECC): Implements advanced ECC algorithms to ensure data integrity.
• Wear Leveling: Distributes write operations evenly across memory blocks, extending the product's lifespan.

Advantages and Disadvantages

Advantages

• High storage capacity meets the demands of modern data-intensive applications.
• Fast data transfer rate enhances overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Reliable performance ensures data integrity and longevity.
• Compact package allows for easy integration into various electronic devices.

Disadvantages

• Relatively higher cost compared to other types of memory.
• Limited endurance due to the finite number of program/erase cycles.
• Susceptible to data loss if not properly managed or protected.

Working Principles

The MT29F128G08AUABAC5-IT:B utilizes NAND flash memory technology. It stores data by trapping electrons in a floating gate structure within each memory cell. When writing data, an electric charge is applied to the control gate, allowing electrons to tunnel through the insulating layer and become trapped in the floating gate. This trapped charge represents a binary value (0 or 1). Reading data involves sensing the voltage level stored in the memory cells.

Detailed Application Field Plans

The MT29F128G08AUABAC5-IT:B finds application in various fields, including: - Consumer electronics: Smartphones, tablets, digital cameras, portable media players. - Computing: Solid-state drives (SSDs), embedded systems, industrial computers. - Automotive: Infotainment systems, navigation devices, advanced driver-assistance systems (ADAS). - Networking: Routers, switches, network storage devices.

Alternative Models

Several alternative models with similar specifications and features to the MT29F128G08AUABAC5-IT:B include: - Samsung K9K8G08U0D - Toshiba TH58NVG7D2FLA89 - Micron MT29F128G08CBABA

These alternative models can be considered based on specific requirements and availability in the market.

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