MT29F2G16ABAEAWP-IT:E

Product Overview

Category

MT29F2G16ABAEAWP-IT:E belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F2G16ABAEAWP-IT:E offers a storage capacity of 2 gigabits (256 megabytes).
• Fast data transfer rate: It provides high-speed data transfer, enabling quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over an extended period.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: MT29F2G16ABAEAWP-IT:E comes in a small form factor, allowing for easy integration into various electronic devices.

Package and Quantity

The MT29F2G16ABAEAWP-IT:E NAND flash memory is packaged in a surface-mount TSOP (Thin Small Outline Package) with 48 pins. It is available in reels containing a specified quantity, typically 250 or 500 units per reel.

Specifications

• Memory Type: NAND Flash
• Capacity: 2 gigabits (256 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 25 megabytes per second (read), up to 10 megabytes per second (write)

Pin Configuration

The detailed pin configuration for MT29F2G16ABAEAWP-IT:E is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CLE
30. RE#
31. WE#
32. WP#
33. R/B#
34. CE#
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. GND
48. VCC

Functional Features

• Page Program Operation: MT29F2G16ABAEAWP-IT:E supports page program operations, allowing data to be written in small increments.
• Block Erase Operation: It enables the erasure of entire blocks of data, providing flexibility in managing stored information.
• Read and Write Operations: The product allows for high-speed read and write operations, facilitating efficient data access and storage.
• Error Correction Code (ECC): ECC functionality is integrated into the NAND flash memory, ensuring data integrity and reliability.

Advantages and Disadvantages

Advantages

• High storage capacity for a wide range of applications.
• Fast data transfer rate enhances overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Compact package enables easy integration into various electronic devices.
• Reliable performance ensures data integrity and longevity.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which may affect its lifespan.
• Relatively higher cost compared to other types of non-volatile memory.

Working Principles

MT29F2G16ABAEAWP-IT:E utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. The stored data can be accessed and modified through specific read and write operations.

During a read operation, the controller sends an address to select the desired memory cell, and the stored data is retrieved by sensing the electrical charge on the floating gate. Write operations involve applying a high voltage to the control gate and channeling electrons onto the floating gate to modify the charge level, effectively storing new data.

Detailed Application Field Plans

MT29F2G16ABAEAWP-IT:E finds applications in various electronic devices that require reliable and high-capacity data storage. Some specific application fields include:

1. Smartphones and tablets: Used