MT29F2G16ABBEAHC-IT:E

Product Overview

Category

MT29F2G16ABBEAHC-IT:E belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F2G16ABBEAHC-IT:E offers a storage capacity of 2 gigabits (256 megabytes).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: The NAND flash memory technology ensures reliable and durable data storage.
• Low power consumption: This product is designed to consume minimal power, making it suitable for portable devices.
• Compact package: MT29F2G16ABBEAHC-IT:E comes in a small form factor, enabling easy integration into various electronic devices.

Package and Quantity

MT29F2G16ABBEAHC-IT:E is packaged in a surface-mount TSOP (Thin Small Outline Package) with 48 pins. It is typically sold in reels containing multiple units.

Specifications

• Storage Capacity: 2 gigabits (256 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 52 megabytes per second (Read), up to 20 megabytes per second (Write)

Pin Configuration

The detailed pin configuration for MT29F2G16ABBEAHC-IT:E is as follows:

1. ALE (Address Latch Enable)
2. CLE (Command Latch Enable)
3. CE (Chip Enable)
4. RE (Read Enable)
5. WE (Write Enable)
6. R/B (Ready/Busy)
7. VCC (Power Supply)
8. GND (Ground)
9. NC (No Connection)
10. DQ0-DQ7 (Data Input/Output)
11. WP (Write Protect)
12. NC
13. NC
14. NC
15. NC
16. NC
17. NC
18. NC
19. NC
20. NC
21. NC
22. NC
23. NC
24. NC
25. NC
26. NC
27. NC
28. NC
29. NC
30. NC
31. NC
32. NC
33. NC
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC
41. NC
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. NC

Functional Features

• Page Read and Program: MT29F2G16ABBEAHC-IT:E allows reading and programming of data in page-level operations, enhancing efficiency.
• Block Erase: It supports block erase operations, enabling the deletion of large chunks of data at once.
• Error Correction Code (ECC): This product incorporates ECC algorithms to ensure data integrity and reliability.
• Wear Leveling: MT29F2G16ABBEAHC-IT:E implements wear leveling techniques to distribute write operations evenly across memory cells, prolonging its lifespan.

Advantages and Disadvantages

Advantages

• High storage capacity for data-intensive applications.
• Fast data transfer rate improves overall system performance.
• Reliable and durable NAND flash memory technology.
• Low power consumption extends battery life in portable devices.
• Compact package facilitates integration into various electronic devices.

Disadvantages

• Limited write endurance compared to other non-volatile memory technologies.
• Relatively higher cost per unit of storage compared to traditional hard disk drives.

Working Principles

MT29F2G16ABBEAHC-IT:E utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. When reading data, the controller applies voltages to specific cells and measures the resulting electrical current to determine the stored data. During programming, the controller applies precise voltage pulses to modify the charge on the floating gates, allowing data to be written into the cells.

Detailed Application Field Plans

MT29F2G16ABBEAHC-IT:E finds applications in various electronic devices that require reliable and high-capacity data storage. Some potential application fields include: - Smartphones and tablets - Digital cameras and camcorders - Solid-state drives (SSDs) - Portable gaming consoles - Industrial control systems - Automotive infotainment systems

Detailed Alternative Models

• MT29