MT29F4G16ABBDAH4:D

Basic Information Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile
  • High capacity
  • Fast read/write speeds
• Package: BGA (Ball Grid Array)
• Essence: Flash memory chip
• Packaging/Quantity: Individual chip

Specifications

• Model: MT29F4G16ABBDAH4:D
• Capacity: 4 gigabits (512 megabytes)
• Interface: Parallel
• Voltage: 3.3V
• Access Time: 25 ns
• Operating Temperature: -40°C to +85°C
• Endurance: 100,000 program/erase cycles

Detailed Pin Configuration

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CLE
30. RE#
31. WE#
32. WP#
33. R/B#
34. CE#
35. BYTE#
36. NC
37. DQ0
38. DQ1
39. DQ2
40. DQ3
41. DQ4
42. DQ5
43. DQ6
44. DQ7
45. DQ8
46. DQ9
47. DQ10
48. DQ11
49. DQ12
50. DQ13
51. DQ14
52. DQ15
53. VSS

Functional Features

• High-speed data transfer
• Block erase and program operations
• Automatic page write and read
• Error correction code (ECC) support
• Power-saving features
• Hardware data protection

Advantages

• Large storage capacity
• Fast read/write speeds
• Low power consumption
• Reliable data retention
• Compact package size

Disadvantages

• Limited endurance compared to other memory types
• Higher cost per unit compared to some alternatives
• Requires specific programming algorithms for optimal performance

Working Principles

MT29F4G16ABBDAH4:D is based on NAND flash memory technology. It stores data in a series of memory cells organized into blocks. Each cell can store multiple bits of information using multi-level cell (MLC) technology. The chip utilizes a combination of transistors and floating gate structures to trap and release electrons, representing binary data.

Detailed Application Field Plans

• Solid-state drives (SSDs)
• USB flash drives
• Memory cards
• Embedded systems
• Consumer electronics
• Industrial applications

Detailed and Complete Alternative Models

1. MT29F4G08ABADAWP:A
2. MT29F4G08ABADAH4:A
3. MT29F4G08ABADAWP:B
4. MT29F4G08ABADAH4:B
5. MT29F4G08ABADAWP:C

(Note: These alternative models have similar specifications and functionality but may differ in package type or other minor details.)

This entry provides an overview of the MT29F4G16ABBDAH4:D flash memory chip. It includes basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.