MT29F4G16ABBDAH4-IT:D

Product Overview

Category

The MT29F4G16ABBDAH4-IT:D belongs to the category of NAND flash memory chips.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G16ABBDAH4-IT:D offers a storage capacity of 4 gigabits (4 Gb).
• Fast data transfer rate: It supports high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory chip ensures reliable data storage and retrieval.
• Low power consumption: The MT29F4G16ABBDAH4-IT:D is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor, enabling easy integration into various electronic devices.

Package and Quantity

The MT29F4G16ABBDAH4-IT:D is typically packaged in a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is commonly available in reels or trays containing multiple units.

Specifications

• Manufacturer: Micron Technology Inc.
• Part Number: MT29F4G16ABBDAH4-IT:D
• Memory Type: NAND Flash
• Storage Capacity: 4 Gb
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: VFBGA (Very Fine Pitch Ball Grid Array)
• Pin Count: 63

Detailed Pin Configuration

1. VCC: Power supply voltage
2. WE#: Write Enable
3. A0-A16: Address Inputs
4. CE#: Chip Enable
5. CLE: Command Latch Enable
6. ALE: Address Latch Enable
7. RE#: Read Enable
8. R/B#: Ready/Busy
9. DQ0-DQ15: Data Input/Output

Note: The pin configuration may vary depending on the specific package variant.

Functional Features

• Page Program: Allows data to be written into the memory cells in page-sized increments.
• Block Erase: Enables erasing of entire blocks of data, providing flexibility for data management.
• Random Access: Supports random access to individual memory locations, facilitating efficient data retrieval.
• Error Correction Code (ECC): Incorporates ECC algorithms to ensure data integrity and reliability.
• Wear Leveling: Implements wear-leveling techniques to distribute write operations evenly across the memory cells, extending the product's lifespan.

Advantages and Disadvantages

Advantages

• High storage capacity enables ample data storage.
• Fast data transfer rate enhances overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Reliable performance ensures data integrity.
• Compact package allows for easy integration into various electronic devices.

Disadvantages

• Limited endurance: NAND flash memory has a finite number of program/erase cycles, which can affect its lifespan.
• Relatively higher cost compared to other types of memory technologies.
• Susceptible to data loss in case of power failure during write operations.

Working Principles

The MT29F4G16ABBDAH4-IT:D utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each memory cell can store multiple bits of information using a floating-gate transistor.

During a write operation, data is programmed into the memory cells by applying appropriate voltages to the control pins. Reading data involves sensing the electrical charge stored in the memory cells and converting it back into digital information.

Detailed Application Field Plans

The MT29F4G16ABBDAH4-IT:D is widely used in various electronic devices that require non-volatile data storage. Some common application fields include:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Digital cameras: Provides storage for high-resolution photos and videos.
3. Solid-state drives (SSDs): Used as primary storage in computers and laptops, offering faster boot times and improved system performance.
4. Industrial automation: Enables data storage in control systems and embedded devices.
5. Automotive electronics: Used for storing firmware, maps, and other critical data in automotive navigation systems.

Detailed and Complete Alternative Models

1. Samsung K9K8G08U0D
2. Toshiba THGBMFG7C2LBAIL
3. SK Hynix H27UCG8T2BTR
4. Intel JS29F64G08CAMDB
5. Micron MT29F4G08ABADAWP

Note