MT29F64G08AMABAC5-IT:B

Product Overview

Category

MT29F64G08AMABAC5-IT:B belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F64G08AMABAC5-IT:B offers a storage capacity of 64 gigabytes (GB), allowing for ample data storage.
• Fast data transfer rate: With its high-speed interface, this NAND flash memory enables quick read and write operations.
• Reliable performance: The product is designed to provide reliable and consistent performance over an extended period.
• Low power consumption: The MT29F64G08AMABAC5-IT:B is energy-efficient, consuming minimal power during operation.
• Compact package: It comes in a small form factor, making it suitable for integration into compact electronic devices.
• Durable design: This NAND flash memory is built to withstand harsh environmental conditions and resist physical damage.

Package and Quantity

The MT29F64G08AMABAC5-IT:B is typically packaged in a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is commonly available in reels or trays, with quantities ranging from hundreds to thousands of units per package.

Specifications

• Storage Capacity: 64 GB
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabytes per second (MB/s)
• Package Type: Surface Mount Technology (SMT)

Detailed Pin Configuration

The MT29F64G08AMABAC5-IT:B has a specific pin configuration that facilitates its integration into electronic devices. The following is the detailed pinout:

1. VCC: Power supply voltage
2. GND: Ground reference
3. CE: Chip enable
4. CLE: Command latch enable
5. ALE: Address latch enable
6. RE: Read enable
7. WE: Write enable
8. R/B: Ready/busy status
9. DQ0-DQ7: Data input/output lines
10. NC: No connection

Functional Features

• Page Program: Allows data to be written in page-sized increments.
• Block Erase: Enables erasing of data at the block level, improving efficiency.
• Random Access: Provides quick access to specific data within the memory.
• Wear-Leveling: Distributes write operations evenly across memory blocks, extending the product's lifespan.
• Error Correction Code (ECC): Implements error correction techniques to ensure data integrity.

Advantages and Disadvantages

Advantages

• High storage capacity meets the demands of modern data-intensive applications.
• Fast data transfer rate enhances overall system performance.
• Low power consumption prolongs battery life in portable devices.
• Compact package enables integration into space-constrained designs.
• Durable design ensures reliable operation in various environments.

Disadvantages

• Relatively higher cost compared to other types of memory.
• Limited endurance due to the finite number of program/erase cycles.
• Susceptible to data loss if not properly managed or protected.

Working Principles

The MT29F64G08AMABAC5-IT:B utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on a floating gate. To read data, the controller applies voltages to the appropriate cells and measures the resulting electrical current. Writing data involves applying specific voltages to program or erase the cells.

Detailed Application Field Plans

The MT29F64G08AMABAC5-IT:B finds application in various electronic devices, including: 1. Smartphones and tablets for storing operating systems, applications, and user data. 2. Digital cameras for capturing and storing high-resolution photos and videos. 3. Solid-state drives (SSDs) for fast and reliable storage in computer systems. 4. Automotive electronics for data logging, infotainment systems, and navigation. 5. Industrial equipment for data storage in rugged environments.

Detailed and Complete Alternative Models

1. MT29F64G08CBAAAWP-IT: Similar NAND flash memory with a different package type.
2. MT29F64G08CBAAWP-IT:E: Alternative model with extended temperature range.
3. MT29F64G08CBAAWP-IT:D: Another alternative with enhanced endurance specifications.

These alternative models offer similar functionality and characteristics but may differ in package type, temperature range, or other specific features.

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