MT48LC4M16A2P-75:G

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Memory module
• Characteristics: High-speed, low-power, synchronous dynamic random-access memory (SDRAM)
• Package: 54-pin TSOP II
• Essence: Provides high-performance memory storage for various electronic devices
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Organization: 4 Meg x 16
• Voltage: 3.3V
• Speed: 133 MHz
• Access Time: 7.5 ns
• Refresh: Auto-refresh and self-refresh modes supported
• Operating Temperature: -40°C to +85°C
• Power Consumption: Low power consumption with standby mode

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS0
38. /CS1
39. /CS2
40. /CS3
41. /BA0
42. /BA1
43. /CKE
44. /CLK
45. /DQM0
46. /DQM1
47. VSS
48. VSS
49. VSS
50. VSS
51. VDDQ
52. VDDQ
53. VDDQ
54. VDDQ

Functional Features

• High-speed operation allows for quick data access and transfer
• Low-power consumption helps conserve energy in electronic devices
• Synchronous design enables efficient communication with the system bus
• Auto-refresh and self-refresh modes ensure data integrity during power fluctuations
• Wide operating temperature range makes it suitable for various environments

Advantages

• Fast data access and transfer speeds enhance overall system performance
• Low power consumption prolongs battery life in portable devices
• Reliable auto-refresh and self-refresh modes prevent data loss
• Wide operating temperature range allows for versatile applications

Disadvantages

• Limited storage capacity compared to other memory modules
• Higher cost per unit compared to some alternative models
• Requires proper handling and installation to avoid damage

Working Principles

MT48LC4M16A2P-75:G operates based on synchronous dynamic random-access memory (SDRAM) technology. It stores data in a matrix of capacitors, which are organized into rows and columns. The memory cells are accessed by sending row and column addresses along with control signals such as CAS (Column Address Strobe), RAS (Row Address Strobe), and WE (Write Enable). The data is read or written using the DQ (Data Queue) pins.

Detailed Application Field Plans

MT48LC4M16A2P-75:G finds application in various electronic devices that require high-performance memory storage. Some common application fields include: - Personal computers - Laptops and notebooks - Servers - Networking equipment - Telecommunications devices - Consumer electronics

Detailed and Complete Alternative Models

1. MT48LC4M16A2P-75 IT:G
2. MT48LC4M16A2P-75 L:G
3. MT48LC4M16A2P-75 G:G
4. MT48LC4M16A2P-75 A:G
5. MT48LC4M16A2P-75 B:G

These alternative models offer similar specifications and functionality, providing options for different customer requirements.

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