M82108G13

Product Overview

• Category: Electronic Component
• Use: Amplifier
• Characteristics:
  • High gain
  • Low noise
  • Wide frequency range
• Package: TO-92
• Essence: Transistor
• Packaging/Quantity: Bulk packaging, 100 pieces per pack

Specifications

• Type: NPN
• Maximum Collector Current (Ic): 500mA
• Maximum Collector-Emitter Voltage (Vce): 40V
• Maximum Power Dissipation (Pd): 625mW
• Transition Frequency (ft): 300MHz
• Operating Temperature Range: -55°C to +150°C

Detailed Pin Configuration

The M82108G13 transistor has three pins:

1. Collector (C): This pin is connected to the positive terminal of the power supply.
2. Base (B): This pin controls the flow of current between the collector and emitter.
3. Emitter (E): This pin is connected to the negative terminal of the power supply.

Functional Features

• High gain amplification of weak signals.
• Low noise operation for improved signal quality.
• Wide frequency range allows for versatile applications.
• Suitable for small-signal amplification in various electronic circuits.

Advantages

• High gain amplification improves signal strength.
• Low noise operation ensures clear signal transmission.
• Wide frequency range enables use in a variety of applications.
• Compact TO-92 package for easy integration into circuit designs.
• Bulk packaging provides cost-effective options for large-scale production.

Disadvantages

• Limited maximum collector current may restrict high-power applications.
• Narrow operating temperature range may limit usage in extreme environments.

Working Principles

The M82108G13 is an NPN transistor that operates as an amplifier. When a small current flows into the base pin, it controls a larger current flow between the collector and emitter pins. This amplification process allows weak signals to be boosted for further processing or transmission.

Detailed Application Field Plans

The M82108G13 transistor finds applications in various electronic circuits, including:

1. Audio Amplifiers: Enhancing audio signals for speakers or headphones.
2. Radio Frequency (RF) Amplifiers: Boosting weak RF signals for wireless communication systems.
3. Oscillators: Generating stable oscillating signals in electronic devices.
4. Sensor Circuits: Amplifying signals from sensors for accurate measurements.
5. Signal Processing: Amplifying and conditioning signals in signal processing circuits.

Detailed and Complete Alternative Models

• M82108G12
• M82108G14
• M82108G15
• M82108G16
• M82108G17

These alternative models offer similar characteristics and functionality to the M82108G13 transistor, providing options for different design requirements.

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