MMUN2113LT3G
Product Overview
Category
MMUN2113LT3G belongs to the category of NPN Bipolar Transistors.
Use
It is commonly used as a switching transistor in various electronic circuits.
Characteristics
- Low voltage drop
- High current capability
- Fast switching speed
Package
The MMUN2113LT3G comes in a small SOT-23 package, making it suitable for compact circuit designs.
Essence
This transistor is essential for amplifying and switching electronic signals in a wide range of applications.
Packaging/Quantity
The MMUN2113LT3G is typically available in reels containing a large quantity of transistors, making it cost-effective for mass production.
Specifications
- Maximum Collector-Base Voltage: 50V
- Maximum Collector Current: 100mA
- Power Dissipation: 225mW
- Transition Frequency: 250MHz
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The MMUN2113LT3G has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)
Functional Features
- High gain
- Low saturation voltage
- Fast switching times
Advantages
- Small form factor
- Suitable for high-frequency applications
- Low power consumption
Disadvantages
- Limited maximum collector current
- Sensitive to overvoltage conditions
Working Principles
The MMUN2113LT3G operates based on the principles of bipolar junction transistors, where the flow of current is controlled by the application of a small signal at the base terminal.
Detailed Application Field Plans
The MMUN2113LT3G is widely used in: - Audio amplifiers - Switching power supplies - RF circuits - LED drivers - Motor control circuits
Detailed and Complete Alternative Models
Some alternative models to MMUN2113LT3G include: - 2N3904 - BC547 - 2SC945 - PN2222A
In conclusion, the MMUN2113LT3G NPN Bipolar Transistor offers a compact and efficient solution for various electronic applications, with its fast switching speed and low voltage drop making it ideal for modern circuit designs.
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What is MMUN2113LT3G?
- MMUN2113LT3G is a high-speed, low-capacitance ESD protection diode designed to protect sensitive electronics from electrostatic discharge (ESD) and electrical overstress (EOS) events.
What are the typical applications of MMUN2113LT3G?
- MMUN2113LT3G is commonly used in various technical solutions such as USB ports, HDMI ports, audio/video inputs/outputs, Ethernet ports, and other high-speed data interfaces to protect against ESD and EOS events.
What is the maximum working voltage of MMUN2113LT3G?
- The maximum working voltage of MMUN2113LT3G is typically around 5V, making it suitable for protecting low-voltage electronic components and interfaces.
What is the capacitance of MMUN2113LT3G?
- The capacitance of MMUN2113LT3G is very low, typically in the range of a few picofarads, which ensures minimal impact on signal integrity in high-speed data applications.
How does MMUN2113LT3G provide ESD protection?
- MMUN2113LT3G utilizes a robust diode structure to shunt ESD currents away from sensitive components, thereby preventing damage due to ESD events.
Is MMUN2113LT3G RoHS compliant?
- Yes, MMUN2113LT3G is RoHS compliant, ensuring that it meets environmental standards for hazardous substance restrictions.
Can MMUN2113LT3G be used in automotive applications?
- Yes, MMUN2113LT3G is suitable for automotive applications where protection against ESD and EOS events is required.
What is the operating temperature range of MMUN2113LT3G?
- The operating temperature range of MMUN2113LT3G is typically from -40°C to 125°C, making it suitable for a wide range of environments.
Does MMUN2113LT3G require external components for proper operation?
- No, MMUN2113LT3G is a standalone ESD protection diode and does not require external components for its basic operation.
Is MMUN2113LT3G available in different package options?
- Yes, MMUN2113LT3G is available in various package options, including SOT-23 and other surface-mount packages, providing flexibility for different design requirements.