Vishay Siliconix
รูปภาพอาจเป็นภาพแทน
ดูข้อมูลจำเพาะสำหรับรายละเอียดสินค้า.
IRFR110TRRPBF
ดูรายละเอียด แผ่นข้อมูล

IRFR110TRRPBF

Product Overview

Category: Power MOSFET
Use: Switching applications in power supplies, converters, and motor control
Characteristics: High voltage, low on-resistance, fast switching speed
Package: TO-252 (DPAK)
Essence: Power management
Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

  • Voltage Rating: 100V
  • Continuous Drain Current: 4.6A
  • RDS(ON): 0.19 Ohm
  • Gate Threshold Voltage: 2V to 4V
  • Power Dissipation: 2.5W

Detailed Pin Configuration

  1. Gate (G)
  2. Drain (D)
  3. Source (S)

Functional Features

  • Low gate charge
  • Improved dv/dt capability
  • Avalanche energy specified
  • Lead-free

Advantages and Disadvantages

Advantages: - Low on-resistance - Fast switching speed - Suitable for high-frequency applications

Disadvantages: - Limited maximum voltage rating - Relatively low continuous drain current

Working Principles

The IRFR110TRRPBF operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.

Detailed Application Field Plans

  1. Power Supplies: Used for efficient power conversion and regulation.
  2. Converters: Enables smooth conversion of electrical energy from one form to another.
  3. Motor Control: Facilitates precise control of motor speed and direction.

Detailed and Complete Alternative Models

  1. IRFR110: Similar specifications and package type
  2. IRFZ44N: Higher voltage rating and current capacity
  3. IRF3205: Lower on-resistance and higher power dissipation

Note: The alternative models listed above are for reference purposes and may require thorough evaluation before substitution.

This comprehensive entry provides a detailed insight into the IRFR110TRRPBF Power MOSFET, covering its specifications, features, application areas, and alternative models, making it a valuable resource for engineers and enthusiasts in the field of electronics.

แสดงรายการคำถามและคำตอบทั่วไป 10 ข้อที่เกี่ยวข้องกับการใช้ IRFR110TRRPBF ในโซลูชันทางเทคนิค

  1. What is the IRFR110TRRPBF?

    • The IRFR110TRRPBF is a power MOSFET transistor designed for use in various electronic applications, such as power supplies, motor control, and lighting.

  2. What is the maximum voltage and current rating of the IRFR110TRRPBF?

    • The IRFR110TRRPBF has a maximum voltage rating of 100V and a continuous drain current rating of 4.6A.

  3. What are the typical applications of the IRFR110TRRPBF?

    • Typical applications include DC-DC converters, motor drives, and load switching for portable devices.

  4. What is the on-resistance of the IRFR110TRRPBF?

    • The on-resistance (RDS(on)) of the IRFR110TRRPBF is typically around 0.115 ohms at a VGS of 10V.

  5. Is the IRFR110TRRPBF suitable for high-frequency switching applications?

    • Yes, the IRFR110TRRPBF is designed for high-speed switching applications due to its low gate charge and capacitance.

  6. Does the IRFR110TRRPBF require a heatsink for operation?

    • The need for a heatsink depends on the specific application and the power dissipation requirements. In high-power applications, a heatsink may be necessary.

  7. What is the operating temperature range of the IRFR110TRRPBF?

    • The IRFR110TRRPBF has an operating temperature range of -55°C to 150°C, making it suitable for a wide range of environments.

  8. Can the IRFR110TRRPBF be used in automotive applications?

    • Yes, the IRFR110TRRPBF is qualified for automotive applications and meets the AEC-Q101 standard.

  9. What are the key features of the IRFR110TRRPBF?

    • Key features include low RDS(on), fast switching speed, low gate charge, and high ruggedness.

  10. Where can I find detailed technical specifications and application notes for the IRFR110TRRPBF?

    • Detailed technical specifications and application notes can be found in the datasheet provided by the manufacturer or on their official website.