SI2328DS-T1-GE3
Product Overview
Category
The SI2328DS-T1-GE3 belongs to the category of power MOSFETs.
Use
It is commonly used in electronic circuits for switching and amplification applications.
Characteristics
- Low on-resistance
- High current capability
- Fast switching speed
- Low gate drive voltage
- Small package size
Package
The SI2328DS-T1-GE3 is typically available in a small outline transistor (SOT-23) package.
Essence
This MOSFET is essential for efficient power management and control in various electronic devices and systems.
Packaging/Quantity
It is usually supplied in reels with a quantity of 3000 units per reel.
Specifications
- Drain-Source Voltage (VDS): 20V
- Continuous Drain Current (ID): 2.5A
- On-Resistance (RDS(on)): 75mΩ
- Power Dissipation (PD): 1.25W
- Gate-Source Voltage (VGS): ±8V
- Operating Temperature Range: -55°C to 150°C
Detailed Pin Configuration
The SI2328DS-T1-GE3 has three pins: 1. Drain (D) 2. Source (S) 3. Gate (G)
Functional Features
- Low on-resistance for minimal power loss
- Fast switching speed for efficient operation
- Small package size for space-constrained designs
- Low gate drive voltage for ease of control
Advantages
- High efficiency in power management
- Suitable for compact designs
- Reliable performance in switching applications
Disadvantages
- Limited maximum drain-source voltage
- Sensitive to static electricity and overvoltage conditions
Working Principles
The SI2328DS-T1-GE3 operates based on the principles of field-effect transistors, where the gate voltage controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
This MOSFET is widely used in: - Battery management systems - DC-DC converters - Motor control circuits - LED lighting applications - Portable electronic devices
Detailed and Complete Alternative Models
Some alternative models to the SI2328DS-T1-GE3 include: - SI2301DS-T1-GE3 - SI2333DDS-T1-GE3 - SI2365DS-T1-GE3 - SI2399DS-T1-GE3
In conclusion, the SI2328DS-T1-GE3 power MOSFET offers high performance and reliability in various electronic applications, making it a popular choice for efficient power management and control.
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What is the maximum drain-source voltage of SI2328DS-T1-GE3?
- The maximum drain-source voltage of SI2328DS-T1-GE3 is 20V.
What is the continuous drain current of SI2328DS-T1-GE3?
- The continuous drain current of SI2328DS-T1-GE3 is 3.7A.
What is the on-resistance of SI2328DS-T1-GE3?
- The on-resistance of SI2328DS-T1-GE3 is typically 0.045 ohms.
What is the power dissipation of SI2328DS-T1-GE3?
- The power dissipation of SI2328DS-T1-GE3 is 1.25W.
What are the typical applications for SI2328DS-T1-GE3?
- SI2328DS-T1-GE3 is commonly used in load switching, power management, and battery protection applications.
What is the operating temperature range of SI2328DS-T1-GE3?
- The operating temperature range of SI2328DS-T1-GE3 is -55°C to 150°C.
Does SI2328DS-T1-GE3 have built-in ESD protection?
- Yes, SI2328DS-T1-GE3 features built-in ESD protection.
What is the package type of SI2328DS-T1-GE3?
- SI2328DS-T1-GE3 comes in a SOT-23 package.
Is SI2328DS-T1-GE3 RoHS compliant?
- Yes, SI2328DS-T1-GE3 is RoHS compliant.
What are the key differences between SI2328DS-T1-GE3 and similar MOSFETs?
- SI2328DS-T1-GE3 offers a low on-resistance, high current capability, and built-in ESD protection, making it suitable for various technical solutions.