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SI7309DN-T1-E3

SI7309DN-T1-E3

Product Overview

Category

The SI7309DN-T1-E3 belongs to the category of power MOSFETs.

Use

It is commonly used in power management applications, such as voltage regulation and switching circuits.

Characteristics

  • Low on-resistance
  • High current handling capability
  • Fast switching speed
  • Low gate drive voltage
  • Enhanced thermal performance

Package

The SI7309DN-T1-E3 is typically available in a compact and efficient PowerPAK® package.

Essence

The essence of this product lies in its ability to efficiently control and manage power flow in various electronic systems.

Packaging/Quantity

It is usually supplied in tape and reel packaging with a specific quantity per reel, typically 3000 units.

Specifications

  • Drain-Source Voltage (VDS): 30V
  • Continuous Drain Current (ID): 6.2A
  • On-Resistance (RDS(ON)): 12mΩ
  • Power Dissipation (PD): 2.5W
  • Gate-Source Voltage (VGS): ±20V
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The SI7309DN-T1-E3 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

  • Low on-resistance for minimal power loss
  • Fast switching speed for improved efficiency
  • Enhanced thermal performance for reliability
  • Low gate drive voltage for ease of use

Advantages

  • High efficiency in power management applications
  • Compact and efficient package design
  • Suitable for a wide range of voltage regulation and switching circuits

Disadvantages

  • Limited maximum drain-source voltage compared to some other MOSFETs
  • May require additional circuitry for certain high-voltage applications

Working Principles

The SI7309DN-T1-E3 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the device.

Detailed Application Field Plans

This MOSFET is widely used in various applications including: - DC-DC converters - Load switches - Battery management systems - Motor control circuits - LED lighting systems

Detailed and Complete Alternative Models

Some alternative models to the SI7309DN-T1-E3 include: - SI7336DP-T1-GE3 - SI7157DP-T1-GE3 - SI7148DP-T1-GE3

In conclusion, the SI7309DN-T1-E3 power MOSFET offers high performance and efficiency in power management applications, making it a versatile choice for various electronic systems.

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แสดงรายการคำถามและคำตอบทั่วไป 10 ข้อที่เกี่ยวข้องกับการใช้ SI7309DN-T1-E3 ในโซลูชันทางเทคนิค

  1. What is the maximum drain-source voltage of SI7309DN-T1-E3?

    • The maximum drain-source voltage of SI7309DN-T1-E3 is 30V.
  2. What is the continuous drain current of SI7309DN-T1-E3?

    • The continuous drain current of SI7309DN-T1-E3 is 6.3A.
  3. What is the on-resistance of SI7309DN-T1-E3?

    • The on-resistance of SI7309DN-T1-E3 is typically 16mΩ at Vgs=10V.
  4. What is the gate threshold voltage of SI7309DN-T1-E3?

    • The gate threshold voltage of SI7309DN-T1-E3 is typically 1.5V.
  5. What is the power dissipation of SI7309DN-T1-E3?

    • The power dissipation of SI7309DN-T1-E3 is 2.5W.
  6. What are the recommended operating temperature range for SI7309DN-T1-E3?

    • The recommended operating temperature range for SI7309DN-T1-E3 is -55°C to 150°C.
  7. Is SI7309DN-T1-E3 RoHS compliant?

    • Yes, SI7309DN-T1-E3 is RoHS compliant.
  8. What are the typical applications for SI7309DN-T1-E3?

    • SI7309DN-T1-E3 is commonly used in load switching, power management, and battery protection applications.
  9. What is the package type of SI7309DN-T1-E3?

    • SI7309DN-T1-E3 comes in a DFN-3x3 package.
  10. Is SI7309DN-T1-E3 suitable for automotive applications?

    • Yes, SI7309DN-T1-E3 is suitable for automotive applications as it meets AEC-Q101 standards.