SIRA14DP-T1-GE3

Product Category:
The SIRA14DP-T1-GE3 belongs to the category of semiconductor devices, specifically a dual P-channel MOSFET.

Basic Information Overview: - Category: Semiconductor device - Use: Power management and switching applications - Characteristics: Dual P-channel MOSFET, low on-resistance, high current capability - Package: DFN (Dual Flat No-Lead) package - Essence: Efficient power management and switching - Packaging/Quantity: Typically available in reels of 3000 units

Specifications: - Voltage Rating: -20V - Continuous Drain Current: -4A - On-Resistance: 60mΩ - Power Dissipation: 1.25W - Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration: - Pin 1: Source (1st MOSFET) - Pin 2: Gate (1st MOSFET) - Pin 3: Drain (1st MOSFET) - Pin 4: Source (2nd MOSFET) - Pin 5: Gate (2nd MOSFET) - Pin 6: Drain (2nd MOSFET)

Functional Features: - Dual P-channel MOSFET configuration - Low on-resistance for minimal power loss - High current capability for efficient power management

Advantages: - Compact DFN package for space-saving designs - Low on-resistance enhances efficiency - Suitable for power management and switching applications

Disadvantages: - Limited voltage rating (-20V) - May not be suitable for high-voltage applications

Working Principles: The SIRA14DP-T1-GE3 operates based on the principles of P-channel MOSFETs, utilizing their characteristics to efficiently manage and switch power in electronic circuits. When appropriate gate voltages are applied, the MOSFETs allow or restrict the flow of current, enabling effective power control.

Detailed Application Field Plans: - Power supply units - Battery management systems - Motor control circuits - LED lighting applications - Portable electronic devices

Detailed and Complete Alternative Models: - SIRA12DP-T1-GE3 - SIRA16DP-T1-GE3 - SIRA14EP-T1-GE3

This comprehensive entry provides an in-depth understanding of the SIRA14DP-T1-GE3, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.