Half Bridge IGBT MOSFET Sink 500mA Source 250mA MOSFET/IGBT Driver, High Voltage, High Voltage and Low Side
ส่วนจำนวน
NCP5106BDR2G
หมวดหมู่
Power Chip > Gate Driver IC
ผู้ผลิต/แบรนด์
onsemi (Ansemi)
การห่อหุ้ม
SOIC-8-150mil
การบรรจุ
taping
จำนวนแพ็คเกจ
2500
คำอธิบาย
The NCP5106 is a high voltage gate driver integrated circuit providing two outputs for direct drive of 2 N-channel power MOSFETs or IGBTs in half-bridge configuration version B or any other high side + low side configuration version A. It uses a bootstrap technique to ensure proper driving of the high side power switch. The driver uses 2 independent inputs. NCP5109 = 200V, NCP5106 = 600V